Now showing items 1-2 of 2
Atomic-scale modeling and experimental studies for dopants and defects in Si and SiGe nano-scale CMOS devices
Continued scaling of CMOS devices with Si and SixGe1-x down to 22 nm design node or beyond will require the formation of ever shallower and more abrupt junctions with higher doping levels in order to manage the short channel ...
A comprehensive study of 3D nano structures characteristics and novel devices
Silicon based 3D fin structure is believed to be the potential future of current semiconductor technology. However, there are significant challenges still exist in realizing a manufacturable fin based process. In this work, ...