Now showing items 1-2 of 2
Germanium and epitaxial Ge:C devices for CMOS extension and beyond
This work focuses on device design and process integration of high-performance Ge-based devices for CMOS applications and beyond. Here we addressed several key challenges towards Ge-based devices, such as, poor passivation, ...
Process integration and performance evaluation of Ge-based quantum well channel MOSFETs for sub-22nm node digital CMOS logic technology
Since metal-oxide-semiconductor (MOS) device was first reported around 1959 and utilized for integrated circuits in 1961, complementary MOS technology has become the mainstream of semiconductor industry. Its performance ...