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dc.contributor.advisorHolmes, Archie L.en
dc.creatorGovindaraju, Sridharen
dc.date.accessioned2011-04-25T20:45:22Zen
dc.date.available2011-04-25T20:45:22Zen
dc.date.issued2002-05en
dc.identifier.urihttp://hdl.handle.net/2152/10999en
dc.descriptiontexten
dc.description.abstractThe emission wavelength of a quantum well depends on the bandgap of quantum well and the barrier surrounding the well. Traditionally, the bandgap of the well is reduced by addition of indium and nitrogen to GaAs (GaInNAs alloys) on GaAs substrates or by addition of indium to GaAs (GaInAs alloys) on InP substrates to obtain emission wavelengths at 1.3 or 1.55 µm. However, the growth of these alloys is associated with numerous growth issues, such as plasma damage in GaInNAs/GaAs heterostructures and lack of suitable epitaxial mirrors for InP-based structures. A reduction in bandgap of barriers surrounding the quantum wells is another means to increase emission wavelength. This dissertation reports on the work done to investigate the influence of barrier on optical properties of quantum wells. A novel quantum structure using plasma assisted MBE – grown Ga1-xInxAs (x < 0.3) quantum wells with GaNyAs1-y (y < 0.05) barriers is studied to obtain near infrared emission wavelengths. The influence of Ga1-xInxAs (x < 0.2) matrix on MEE – grown Ga0.5In0.5As quantum dots on GaAs substrates is also studied to understand the influence of a barrier on the quantum structure. Relocating nitrogen from quantum well to the barrier and introducing a GaAs spacer at the barrier – to – well and well – to – barrier interfaces has helped in reducing the influence of plasma-damage on optical properties of the GaInAs quantum well.
dc.format.mediumelectronicen
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subjectQuantum wells--Optical propertiesen
dc.subjectGallium arsenideen
dc.titleGallium arsenide based MBE-grown quantum structures for near infrared wavelength applicationsen
dc.description.departmentMaterials Science and Engineeringen
thesis.degree.departmentMaterials Science and Engineeringen
thesis.degree.disciplineMaterials Science and Engineeringen
thesis.degree.grantorThe University of Texas at Austinen
thesis.degree.levelDoctoralen
thesis.degree.nameDoctor of Philosophyen
dc.rights.restrictionRestricteden


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