• III-V MOSFETs from planar to 3D 

    Xue, Fei, active 2013 (2013-08-05)
    Si complementary metal-oxide-semiconductor (CMOS) technology has been prospered through continuously scaling of its feature size. As scaling is approaching its physical limitations, new materials and device structures are ...
  • Novel 3-D IC technology 

    Zhai, Yujia (2014-06-25)
    For many decades silicon based CMOS technology has made continual increase in drive current to achieve higher speed and lower power by scaling the gate length and the gate insulator thickness. The scaling becomes increasingly ...
  • Technology computer aided design and analysis of novel logic and memory devices 

    Hasan, Mohammad Mehedi (2012-10-11)
    Novel logic and memory device concepts are proposed and analyzed. For the latter purpose the commercial technology computer aided design (TCAD) simulators Taurus and Sentaurus Device by Synopsys are used. These simulators ...