Molecular beam epitaxy of topological insulator Bi₂Se₃

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Molecular beam epitaxy of topological insulator Bi₂Se₃

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Title: Molecular beam epitaxy of topological insulator Bi₂Se₃
Author: Chen, Yuxuan, 1986-
Abstract: In this thesis, I show my effort in growing atomically flat Bi₂Se₃ thin films using molecular beam epitaxy (MBE) method. Bi₂Se₃ is a kind of topological insulator, whose exotic surface states have been found in the samples that I grew.
Department: Physics
Subject: Topological insulator Molecular beam epitaxy
URI: http://hdl.handle.net/2152/ETD-UT-2012-05-5573
Date: 2012-05

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