Analytical models of single and double gate JFETs for low power applications

Repository

Analytical models of single and double gate JFETs for low power applications

Show full record

Title: Analytical models of single and double gate JFETs for low power applications
Author: Chang, Jiwon, active 2013
Abstract: I propose compact models of single-gate (SG) and double-gate (DG) JFETs predicting the current-voltage characteristics for both long and short channel devices. In order to make the current equation continuous through all operating conditions from subthreshold to well-above threshold, without non-physical fitting parameters, mobile carriers in depletion region are considered. For describing the short channel behavior, relevant parameters extracted from the two-dimensional analytical solution of Poisson's equation are used for modifying long channel equations. Comparisons of models with the numerical simulation showing close agreement are presented. Based on models, merits of DG JFET over SG JFET and SG MOSFET are discussed by examining the schematic circuit diagram describing the relation between gate and channel potentials for each device.
Department: Electrical and Computer Engineering
Subject: JFET single gate double gate analytical model short channel effect subthreshold swing low power
URI: http://hdl.handle.net/2152/ETD-UT-2009-05-65
Date: 2009-05

Files in this work

Download File: CHANG-THESIS.pdf
Size: 689.6Kb
Format: application/pdf

This work appears in the following Collection(s)

Show full record


Advanced Search

Browse

My Account

Statistics

Information