Fundamental understanding of the physics and modeling of boron source/drain extension evolution during CMOS device fabrication

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Fundamental understanding of the physics and modeling of boron source/drain extension evolution during CMOS device fabrication

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Title: Fundamental understanding of the physics and modeling of boron source/drain extension evolution during CMOS device fabrication
Author: Kohli, Puneet
Abstract: Not available
Department: Electrical and Computer Engineering
Subject: Metal oxide semiconductors, Complementary Semiconductors--Design and construction
URI: http://hdl.handle.net/2152/708
Date: 2003

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