High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hf-based High-K gate dielectrics and interface engineering for HfO₂/Ge CMOS device
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High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hf-based High-K gate dielectrics and interface engineering for HfO₂/Ge CMOS device
| Title: | High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hf-based High-K gate dielectrics and interface engineering for HfO₂/Ge CMOS device |
| Author: | Lu, Nan |
| Abstract: | Not available |
| Department: | Materials Science and Engineering |
| Subject: |
Hafnium oxide
Dielectrics Gate array circuits |
| URI: | http://hdl.handle.net/2152/2826 |
| Date: | 2006 |
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