High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hf-based High-K gate dielectrics and interface engineering for HfO₂/Ge CMOS device

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High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hf-based High-K gate dielectrics and interface engineering for HfO₂/Ge CMOS device

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Title: High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hf-based High-K gate dielectrics and interface engineering for HfO₂/Ge CMOS device
Author: Lu, Nan
Abstract: Not available
Department: Materials Science and Engineering
Subject: Hafnium oxide Dielectrics Gate array circuits
URI: http://hdl.handle.net/2152/2826
Date: 2006

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