Fabrication modeling and reliability of novel architecture and novel materials based MOSFET devices

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Fabrication modeling and reliability of novel architecture and novel materials based MOSFET devices

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Title: Fabrication modeling and reliability of novel architecture and novel materials based MOSFET devices
Author: Dey, Sagnik
Abstract: Not available
Department: Electrical and Computer Engineering
Subject: Metal oxide semiconductor field-effect transistors--Design and construction Metal oxide semiconductor field-effect transistors--Materials Germanium compounds Silicon compounds
URI: http://hdl.handle.net/2152/2714
Date: 2006

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