Processing and reliability studies on hafnium oxide and hafnium silicate for the advanced gate dielectric application

Repository

Processing and reliability studies on hafnium oxide and hafnium silicate for the advanced gate dielectric application

Show simple record

dc.contributor.advisor Lee, Jack Chung-Yeung
dc.creator Choi, Rino
dc.date.accessioned 2008-08-28T22:23:09Z
dc.date.available 2008-08-28T22:23:09Z
dc.date.created 2004
dc.date.issued 2008-08-28T22:23:09Z
dc.identifier.uri http://hdl.handle.net/2152/1907
dc.description.abstract Not available
dc.format.medium electronic
dc.language.iso eng
dc.rights Copyright © is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.
dc.subject.lcsh Dielectrics
dc.subject.lcsh Hafnium compounds
dc.subject.lcsh Hafnium oxide
dc.subject.lcsh Silicates
dc.subject.lcsh Metal oxide semiconductor field-effect transistors
dc.title Processing and reliability studies on hafnium oxide and hafnium silicate for the advanced gate dielectric application
dc.description.department Materials Science and Engineering
dc.identifier.oclc 67134608
dc.identifier.proqst 3143668
dc.identifier.recnum b60728668
dc.type.genre Thesis
dc.type.material text
thesis.degree.department Materials Science and Engineering
thesis.degree.discipline Materials Science and Engineering
thesis.degree.grantor The University of Texas at Austin
thesis.degree.level Doctoral
thesis.degree.name Doctor of Philosophy

Files in this work

Download File: choir042.pdf
Size: 2.011Mb
Format: application/pdf

This work appears in the following Collection(s)

Show simple record


Advanced Search

Browse

My Account

Statistics

Information