| Title: | Processing and reliability studies on hafnium oxide and hafnium silicate for the advanced gate dielectric application |
| Author: | Choi, Rino |
| Abstract: | Not available |
| Department: | Materials Science and Engineering |
| Subject: |
Dielectrics
Hafnium compounds Hafnium oxide Silicates Metal oxide semiconductor field-effect transistors |
| URI: | http://hdl.handle.net/2152/1907 |
| Date: | 2004 |