Simulation study of deep sub-micron and nanoscale semiconductor transistors

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Simulation study of deep sub-micron and nanoscale semiconductor transistors

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dc.contributor.advisor Banerjee, Sanjay
dc.contributor.advisor Register, Leonard F.
dc.creator Xia, Tongsheng
dc.date.accessioned 2008-08-28T22:16:26Z
dc.date.available 2008-08-28T22:16:26Z
dc.date.created 2005
dc.date.issued 2008-08-28T22:16:26Z
dc.identifier.uri http://hdl.handle.net/2152/1769
dc.description.abstract Not available
dc.format.medium electronic
dc.language.iso eng
dc.rights Copyright © is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.
dc.subject.lcsh Metal oxide semiconductor field-effect transistors--Computer simulation
dc.subject.lcsh Integrated circuits--Ultra large scale integration
dc.subject.lcsh Nanostructured materials
dc.title Simulation study of deep sub-micron and nanoscale semiconductor transistors
dc.description.department Electrical and Computer Engineering
dc.identifier.oclc 62126628
dc.identifier.recnum b6010126x
dc.type.genre Thesis
dc.type.material text
thesis.degree.department Electrical and Computer Engineering
thesis.degree.discipline Electrical and Computer Engineering
thesis.degree.grantor The University of Texas at Austin
thesis.degree.level Doctoral
thesis.degree.name Doctor of Philosophy

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