Ultra-shallow junction formation : co-implantation and rapid thermal annealing

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Ultra-shallow junction formation : co-implantation and rapid thermal annealing

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dc.contributor.advisor Banerjee, Sanjay
dc.creator Li, Hong-jyh
dc.date.accessioned 2011-05-16T21:14:18Z
dc.date.available 2011-05-16T21:14:18Z
dc.date.created 2002-08
dc.date.issued 2011-05-16
dc.identifier.uri http://hdl.handle.net/2152/11248
dc.description.abstract Not available
dc.format.medium electronic
dc.language.iso eng
dc.rights Copyright © is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.
dc.subject Boron compounds
dc.subject Ion implantation
dc.subject Diffusion--Computer simulation
dc.title Ultra-shallow junction formation : co-implantation and rapid thermal annealing
dc.description.department Electrical and Computer Engineering
dc.type.genre Thesis
dc.type.material text
thesis.degree.department Electrical and Computer Engineering
thesis.degree.discipline Electrical and Computer Engineering
thesis.degree.grantor The University of Texas at Austin
thesis.degree.level Doctoral
thesis.degree.name Doctor of Philosophy
dc.rights.restriction Restricted

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