Atomic layer deposition and properties of refractory transition metal-based copper-diffusion barriers for ULSI interconnect

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Atomic layer deposition and properties of refractory transition metal-based copper-diffusion barriers for ULSI interconnect

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Title: Atomic layer deposition and properties of refractory transition metal-based copper-diffusion barriers for ULSI interconnect
Author: Lemonds, Andrew Michael
Abstract: Not available
Department: Chemical Engineering
Subject: Integrated circuits--Ultra large scale integration--Design and construction Tantalum
URI: http://hdl.handle.net/2152/1104
Date: 2003

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