| dc.contributor.advisor | Banerjee, Sanjay |
| dc.contributor.advisor | Tasch, Al F. |
| dc.creator | Mudanai, Sivakumar Panneerselvam |
| dc.date.accessioned | 2011-03-28T21:59:22Z |
| dc.date.available | 2011-03-28T21:59:22Z |
| dc.date.created | 2001-08 |
| dc.date.issued | 2011-03-28 |
| dc.identifier.uri | http://hdl.handle.net/2152/10757 |
| dc.description.abstract | Not available |
| dc.format.medium | electronic |
| dc.language.iso | eng |
| dc.rights | Copyright © is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works. |
| dc.subject | Computer engineering |
| dc.subject | Dielectric devices |
| dc.title | Gate current modeling through high-k materials and compact modeling of gate capacitance |
| dc.rights.holder | Restricted |
| dc.description.department | Electrical and Computer Engineering |
| dc.type.genre | Thesis |
| dc.type.material | text |
| thesis.degree.department | Electrical and Computer Engineering |
| thesis.degree.discipline | Electrical and Computer Engineering |
| thesis.degree.grantor | The University of Texas at Austin |
| thesis.degree.level | Doctoral |
| thesis.degree.name | Doctor of Philosophy |